sot-89-3l 1. base 2. collector 3. emitter jiangsu changjiang electron ics technology co., lt d sot-89-3l plastic-encapsulate tr ansistors 2SA554 transistor (pnp) features z low saturation voltage z high speed switching maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) pa rameter symbol test conditions min typ max unit collector-base b reakdown voltage v (br)cbo i c = -0.1ma,i e =0 - 10 0 v collector-emitter breakd own voltage v (br)ceo i c =-1ma,i b =0 - 100 v emitter-base br eakdown voltage v (br)ebo i e =-0.1ma,i c =0 - 6 v collector cut-o ff current i cbo v cb =- 10 0v,i e =0 -1 u a emitter cut-off current i ebo v eb =- 4 v,i c =0 -1 u a v ce =- 3 v, i c =- 1 00ma 120 2 7 0 dc current ga in h fe collector-emitter satu r ation voltage v ce(sat) i c =-1a,i b =-50ma -0. 3 v collector o u tput capacitance c ob v cb =-10v,i e =0, f=1m hz 32 pf trans ition frequency f t v ce =- 5 v,i c = -0. 1 a mhz symbol parameter v a lue unit v cbo collector-base voltage -100 v v ceo collector-emitter voltage - 100 v v ebo emitter-base voltage - 6 v i c collector current - 2 a p c collector power dissip ation 500 mw r ja thermal resistance from jun ction to ambient 250 / w t j junction temperature 150 t stg storage tempe rature -55~+150 www.cj-elec.com 1 a- 2 , dec ,201 6 i c =- 0.5 a,i b =- 25 ma -0. 2 v 3 0 marking: a554
& |